Dresden 2006 – wissenschaftliches Programm
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O: Oberflächenphysik
O 29: Poster session II (Nanostructures, Magnetism, Particles and clusters, Scanning probe techniques, Time-resolved spectroscopy, Structure and dynamics, Semiconductor surfaces and interfaces, Oxides and insulators, Solid-liquid interfaces)
O 29.68: Poster
Mittwoch, 29. März 2006, 14:30–17:30, P2
Surface characterization of InN grown by PIMBE — •Marcel Himmerlich1,2, Vadim Lebedev2, Stefan Krischok1,2, Oliver Ambacher2, and Juergen A. Schaefer1,2 — 1Institut für Physik, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany — 2Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany
Indium nitride (InN) layers were grown by plasma-induced molecular beam epitaxy using a conventional effusion cell for In and an rf nitrogen plasma source to supply active N radicals. The growth was monitored by a quadrupole mass spectrometer and reflection high energy electron diffraction (RHEED). After removal from the growth chamber, the samples were directly cut and loaded to a second UHV system to reduce the exposure to contaminants from ambient air. The InN layers were investigated using X-ray and ultra-violet photoelectron spectroscopy (XPS, UPS) and atomic force microscopy (AFM). Although the surface is quite rough (rms 4.5nm), surface steps with a height of 6Å can be observed. The amount of carbon and oxygen on the surface is relatively low compared to samples which have been exposed to air for a few days. Heating of the samples to 170∘C–230∘C resulted in a further reduction of oxygen along with a removal of the oxide related feature in the In3d and In4d core levels. However, this procedure did not succeed in removing any carbon. The binding energy of the InN related peaks are 443.9eV, 396.3eV and 17.4eV for In3d5/2, N1s and In4d5/2, respectively. Additionally, a structure in the valence band emerges at 3.1eV which can be attributed to a nitrogen related contribution.