Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 4: Nanostructures I
O 4.2: Vortrag
Montag, 27. März 2006, 11:30–11:45, PHY C213
Metallic Multilayer TiSi2 Nanocontacts — •Svend Vagt1, Jan Rönspies1, Tammo Block1, Volkmar Zielasek2, and Herbert Pfnür1 — 1Institut für Festkörperphysik, Universität Hannover — 2Institut für Angewandte und Physikalische Chemie, Universität Bremen
For electrical investigations of nanosized structures, macroscopic contacts pads have to fullfil several prerequisites like low resitivity, chemical purity and inertness, a defect free substrate, and well defined boundaries. By MBE in an UHV-chamber, we produced a stack of alternating Si, Ti, and Si layers on a structured Si sample. After transport through air, an annealing step up to 750∘C in UHV forms the highly conducting C54 crystal structure. The Si capping layer efficiently protects the underlying Ti layer against oxidation. Only low temperature annealing is then required afterwards for cleaning and oxide removal. Generation of a deep trench at the boundary of TiSi2 and Si at the surface was avoided by a Si starting layer. Lateral diffusion of Ti into silicon, as shown by [1] for simple thin Ti pads on Si, is vital for the understanding of the contacting of nanostructures to the contactpads. We will compare our results of SAM, STM, and STS measurements of the pad boundaries of the multilayer silicide pads with [1], and discuss the requirements for contacting a one-dimensional electrically conducting system, and show as an example the contacting of Ag and Pb nanowires.
[1] Palermo et. al., Appl. Phys. Lett., Vol. 81, No.19, 2002