Düsseldorf 2007 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 5: Dichte Plasmen

P 5.5: Vortrag

Montag, 19. März 2007, 15:45–16:00, 6C

Time-resolved EUV images of a tin vapour discharge plasma for future lithography — •Arnaud Mader¹, Mirko Aden¹, Klaus Bergmann¹, Willi Neff¹ und Jeroen Jonkers² — ¹Fraunhofer Institute for Laser Technology (ILT), Steinbachstrasse 15, 52074 Aachen, Germany — ²Philips Extreme UV GmbH, Steinbachstrasse 15, 52074 Aachen, Germany

The semiconductor industry must be able to produce chips with 32 nm features from 2009 on, in order to maintain its progression and to answer the needs of the market. Extreme UltraViolet Lithography (EUVL) achieves this high resolution by using light with a wavelength of 13.5 nm and is the only technology which enables a high wafer throughput. A high power EUV light source of approximately 1kW CW in 2% bandwidth is necessary to achieve this. Philips Extreme UV, in cooperation with Fraunhofer ILT, develops a laser induced tin vapour plasma.

To increase our fundamental understanding and to measure the plasma size as well as its spatial jitter from pulse to pulse, the transient behaviour of the plasma is investigated. EUV light images of the plasma are recorded using a time-resolved pinhole imaging system (5 ns time resolution, 50 microns spatial resolution). By synchronizing the camera with the discharge, the evolution of the plasma can be observed with 5 ns steps over consecutive pulses. The experimental results are compared to a numerical model of the discharge.

Part of this work is funded by the European Union and the BMBF under contract number 13N8865.