Regensburg 2007 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 7: Dielectric and Ferroelectric Thin Films and Nanostructures I

DF 7.5: Vortrag

Dienstag, 27. März 2007, 16:10–16:30, H11

Microstructure and properties of antiferroelectric/ferroelectric PbZrO₃/Pb(Zr_xTi_1−x)O₃ epitaxial multilayers — •Ksenia Boldyreva, Eugene Pustovalov, Lucian Pintilie, Marin Alexe, and Dietrich Hesse — Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany

Antiferroelectric/ferroelectric multilayers and superstructures represent a topic of interest due to potential coupling phenomena and strain effects. Here, we investigate epitaxial multilayers consisting of alternating antiferroelectric PbZrO₃ (PZO) and ferroelectric Pb(Zr₈₀Ti₂₀)O₃ (PZT80/20) layers. Rhombohedral PZT80/20 was chosen, because its ferroelectric axis lies along the pseudocubic (pc) [111]_pc-direction, corresponding to the [111]_pc-direction of the ferroelectric axis in the field-induced ferroelectric state of PZO. PZO/PZT80/20 multilayers were deposited onto STO (100) substrates by pulsed laser deposition (PLD) in oxygen atmosphere. To enable electrical measurements, epitaxial (100)-otiented SrRuO₃ (SRO) was used as bottom electrode, because of its atomically flat surface and the low STO/SRO lattice mismatch. SRO deposited on STO shows steps of single unit-cell height due to the layer-by-layer growth mode. XRD analyses and TEM, HRTEM and SAED investigations revealed the preferred (120)_o orientation of the PZO layers and the (001)_rh orientation of the PZT layers. (Index o  refers to orthorhombic, index rh  to rhombohedral indexing). The antiferroelectric properties of the films are under study by macroscopic ferroelectric measurements. Growth-structure-property relations of the PZO/PZT80/20 epitaxial multilayers will be discussed.