Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Thin Film Analytics III
DS 14.2: Vortrag
Dienstag, 27. März 2007, 17:00–17:15, H34
Self assemblied Ge nanocrystals on high-k cubic Pr2O3(111) /Si(111) support systems — •Alessandro Giussani1, Thomas Schroeder1, Cristian Mokuta2, Till Metzger2, Dorin Geiger3, Peter Formanek3, and Hannes Lichte3 — 1IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France — 3Technical University of Dresden, Institute of Structure Physics, Zellescher Weg 16, 01062 Dresden, Germany
The stoichiometry, structure and defects of self-assemblied heteroepitaxial Ge nanodots on twin-free type B oriented cubic Pr2O3(111) layers on Si(111) substrates is studied to shed light on the fundamental physics of nanocrystal based nonvolatile memory effects. XPS studies prove the high stoichiometric purity of the Ge nanodots on the cubic Pr2O3(111)/Si(111) support system. Synchrotron based X-ray diffraction, including resonant scattering techniques, were applied to determine the epitaxial relationship, showing that the heteroepitaxial Ge(111) nanodots crystallize in the cubic diamond structure with an exclusive type A stacking configuration with respect to Si(111). GI-SAXS was used in addition to analyse the average shape, size and distance parameters of the single crystalline Ge nanocrystal ensemble. Furthermore, TEM micrographs report that partial dislocations are the prevailing extended defect structure in the Ge nanodots, probably induced by surface roughness on the atomic scale of the cubic Pr2O3(111) support.