Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 15: Poster Session
DS 15.29: Poster
Dienstag, 27. März 2007, 15:00–17:00, Poster B
Characterisation of praseodymium-oxide films on Si(111) including SPALEED, XRD and GIXRD measurements — •Sebastian Gevers1, Thomas Weisemoeller1, Thomas Schroeder2, Peter Zaumseil2, Lars Boewer1, Carsten Deiter1, and Joachim Wollschlaeger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastrasse 7, 49076 Osnabrück, Germany — 2IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Materials with high dielectric constants k offer great potentialities to improve performance of semiconductor devices. In this context the investigation of praseodymium-oxide films leads to a deeper understanding of fundamental aspects of heteroepitaxial growth of oxide films on Si(111). Object of this research are Si(111) samples on which Pr2O3 films of thickness d ≤ 10 nm have been deposited. The oxide films were produced using MBE, so that the Pr2O3 films have hexagonal structure. Afterwards they were annealed in N2 to form Pr2O3 films of cubic structure. Several investigation methods like SPALEED and AES as well as (GI)XRD were used. (GI)XRD investigations were performed at beamlines BW2 and W1 at HASYLAB(DESY). Throughout these experiments a complete transformation of the crystallographic phase from hexagonal-Pr2O3 to cubic-Pr2O3 (B oriented) could be observed. This can be attributed to the annealing process. The thickness of the crystalline part of the oxide film annealed at higher temperatures decreases. Therefore silicate is formed at the interface. SPALEED investigation shows a 4×4 reconstruction at the cubic phase.