Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 20: Symposium: Real Time Growth Studies I
DS 20.2: Vortrag
Donnerstag, 29. März 2007, 09:45–10:00, H32
X-ray in-situ investigations of growing SiGe nanostructures on nominal substrates and patterned templates — •Tobias Schulli1, Marie-Ingrid Richard1, Gilles Renaud1, Gang Chen2, and Guenther Bauer2 — 11CEA Grenoble, DRFMC/SP2M 17 rue des martyrs, 38054 Grenoble, France — 2Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz Austria
A challenge for the development of nano-electronics is to elaborate semiconductor quantum dots that are homogeneous in shape, size, strain and composition, thus resulting in well-defined electronic and optical properties. Recently the growth of highly monodisperse Ge islands on prepatterned Si substrates has been obtained by a combination of lithography and self-assembly techniques [1]. The complexity of such growth modes calls for in-situ studies of the kinetics of epitaxy on patterned surfaces. On BM32 at the ESRF in Grenoble, we have developed in-situ x-ray scattering methods giving access to the evolution, of size, shape, faceting, strain relaxation and interdiffusion during the growth. Utilizing grazing incidence small angle x-ray scattering and diffraction these tools were used to track the facet size evolution for growing Ge domes on nominal Si (001) surfaces, as well as in the determination of material transport from the wetting layer during the transition form two dimensional to island growth [2,3].
References
[1] Z. Zhong et al. Appl. Phys. Lett. 84, 1922 (2004).
[2] T.U. Schülli et al., Appl. Phys. Lett. 89, 143114 (2006).
[3] M.-I. Richard et al., submitted to Phys Rev. Lett. (2006).