Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 28: Silicon Thin Films and Interfaces
DS 28.4: Vortrag
Freitag, 30. März 2007, 12:15–12:30, H32
Influence of fluorine contamination on semiconductor wafer probing — •Markus Reinl1, Torsten Sulima1, Ignaz Eisele1, Oliver Nagler2, and Florian Kaesen2 — 1Institut für Physik, Universität der Bundeswehr, Neubiberg — 2Infineon Technologies AG, München
Probing over active area (POAA) is getting more and more important in modern semiconductor production. As a result there is a strong demand on measuring the contact forces and the electrical resistance directly and online to get a better understanding of the failure mechanism. Therefore a new probing tool was developed at our institute. With our tool we can measure all probing relevant parameters like normal and lateral force and the electrical resistance directly on wafer level. In semiconductor production aluminum is still used as material for the probing and bonding pads. It is widely spread that the difficulties during probing are caused by the native aluminum oxide on top of the aluminum pads. We will show measurements for the electrical resistance on aluminum and on gold pads and show that the native oxide is not the only reason for a bad electrical resistance. Also fluorine contaminations, caused by fluorine plasma used to open the passivation for the probing pads, must be considered. To examine the influence of fluorine contaminations of the probing pads we will show measurements of the contact forces and the electrical resistance on aluminum pads exposed to fluorine plasma.