Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 21: III-V semiconductors II
HL 21.3: Vortrag
Dienstag, 27. März 2007, 11:30–11:45, H17
The Fe center in III-V and II-VI semiconductors — •Enno Malguth and Axel Hoffmann — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
A comprehensive review of the Fe impurity in binary III-V and II-VI compounds is given with focus on GaN and ZnO. In this context, new results on the effective-mass-like state consisting of a valence band hole bound to Fe2+ are presented. In connection with diluted magnetic semiconductors, transition metal impurities particularly in wide band semiconductors have regained considerable interest. Focussing on Fe we give an overview on general phenomena such as charge states, electronic structure, charge transfer processes, Jahn-Teller effect etc. which have been investigated over the last couple of decades. The (Fe2+, hVB) state which has been observed in a range of III-V materials may play a central role in realizing carrier mediated ferromagnetism. By means of temperature and stress dependent absorption experiments we are able to give a good understanding of an experimentally observed deviation of the ground state from effective-mass theory. A conclusive model of the bound state’s ground state is given taking into account exchange interaction between the hole and Fe2+ states.