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HL: Fachverband Halbleiterphysik

HL 27: II-VI semiconductors

HL 27.7: Talk

Wednesday, March 28, 2007, 16:00–16:15, H13

Sputter deposition at high substrate temperatures and characterization of ZnO, ZnO:P and ZnO:N films — •Sebastian Eisermann, Joachim Sann, Swen Graubner, Christian Neumann, Stefan Lautenschläger, Niklas Volbers, Angelika Polity, and Bruno Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Deutschland

Pure ZnO, phosphorous and nitrogen doped ZnO thin films have been prepared on quartz glass, sapphire, gallium nitride, and zinc oxide substrates at temperatures up to 750°C by radio-frequency (RF) sputtering using pure ZnO and doped ZnO/P2O5 (1wt%) ceramic targets in pure argon, in a mixture of argon and oxygen or in a mixture of argon, oxygen and nitrogen (N2).

By optimizing the sputter parameters, such as sputtering power, temperature of the substrate or Ar/O2/N2 sputtering gas ratios, high quality films were obtained. The thin film crystallinity and surface morphology has been investigated with X-ray diffraction (XRD), atomic force (AFM) and scanning electron microscopy (SEM). Optical properties have been examined by measuring optical transmission and photoluminescence (PL) spectra. Hall measurements were carried out to check electric properties. Secondary Ion Mass Spectrometry (SIMS) measurements have been performed to determine the distribution of phosphor and nitrogen, respectively, in the doped layers.