Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Heterostructures
HL 36.7: Vortrag
Donnerstag, 29. März 2007, 11:30–11:45, H14
Interface and Luminescence Properties of Pulsed Laser Deposited MgxZn1−xO/ZnO Quantum Wells with Strong Confinement — •Susanne Heitsch, Gregor Zimmermann, Alexander Müller, Jörg Lenzner, Holger Hochmuth, Gabriele Benndorf, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstraße 5, D-04103 Leipzig, Germany
MgxZn1−xO/ZnO/MgxZn1−xO quantum wells (QWs) (0.12 ≤ x ≤ 0.15) have been grown on a-plane sapphire substrates by pulsed laser deposition. The nominal ZnO well layer thickness ranges from 1.2 nm to 6 nm. Atomic force microscopy (AFM) investigations on MgxZn1−xO thin films and on ZnO/MgxZn1−xO heterostructures confirm the smoothness of the interfaces in the QWs (root mean square roughness of ∼ 0.5 nm) and the film-like structure of the ZnO layers. We confirmed the lateral homogeneity of the Mg distribution in the MgxZn1−xO barrier layers by scanning cathodoluminescence measurements. The QWs show a bright and laterally homogeneous luminescence, suggesting good crystalline quality of the ZnO wells. The measured QW photoluminescence energies are compared with calculated values and display the presence of the quantum-confined Stark effect. As a result of quantum confinement a high-energy shift of the ZnO excitonic photoluminescence of 222 meV is observed in the thinnest QW.