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HL: Fachverband Halbleiterphysik
HL 36: Heterostructures
HL 36.9: Vortrag
Donnerstag, 29. März 2007, 12:00–12:15, H14
Tunneling Spectroscopy on the Interface of an Operating pin-Diode — •S. Loth1, M. Wenderoth1, K. Teichmann1, L. Winking1, R. G. Ulbrich1, S. Malzer2, and G. H. Döhler2 — 1Universität Göttingen, IV. Physikalisches Institut, Germany — 2Universität Erlangen-Nürnberg, Max-Planck-Research Group, Institute of Optics, Information, and Photonics, Germany
The interface of a GaAs pin-diode heterostructure is investigated by means of Cross Sectional Scanning Tunneling Microscopy at 8K. The internal electric field of the diode is of the order of 108 V/m and is externally controlled by source and drain contacts during the measurement. The variable field of the diode structure acts perpendicular to the tip induced field. In the experiment this enables the manipulation of charge states and energetic surroundings of single dopant atoms located in the pin-interface. At a fixed tunneling bias voltage the applied source drain voltage allows to shift the different surface resonances of the {110} cleavage surfaces in and out of the tunneling channel. In spatially resolved I(V)-spectroscopies the impact of the changing internal electric field on the band gap conductivity near the dopant atoms and its influence on the tip induced states is deduced.
This work was supported by the DFG, SFB 602, and the German National Academic Foundation.