Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: ZnO I
HL 38.1: Vortrag
Donnerstag, 29. März 2007, 10:00–10:15, H17
Photoluminescence of vanadium-implanted and annealed ZnO thin films — •Michael Lorenz1, Heidemarie Schmidt1, Carsten Ronning2, Sven Müller2, Mariana Ungureanu1, Gabriele Benndorf1, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany — 2Georg-August-Universität Göttingen, II. Physikalisches Institut, Göttingen, Germany
Within our search for multifunctional ferromagnetic and semiconducting ZnO-based thin film material for spintronic applications we have implanted 250 keV 51V-ions into PLD-grown, about 700 nm thin ZnO films on a-plane sapphire. The implantation was done either at 300∘C or at room temperature and several annealings up to 900∘C were done after implantation. Low-temperature photoluminescence spectra taken before and after implantation and after annealing show remarkable changes of the intensities of excitonic peaks (UV) and the green defect-related band (VIS) with the implantation fluence and the annealing temperature. Interestingly, after high-temperature annealing the UV / VIS intensity ratio increases with increasing V-implantation fluence. In contradiction to the V-implanted samples, some reference films implanted with Ar-ions show a strong quenching of the excitonic luminescence, as found earlier also for Mn-doped ZnO [1]. This points to a different incorporation of V, Ar, Mn, and Co into the ZnO lattice.
Funded within BMBF Young Scientists Group Nanospintronics.
[1] M. Diaconu, H. Schmidt et. al., Thin Solid Films 486 (2005) 117.