Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: ZnO I
HL 38.9: Vortrag
Donnerstag, 29. März 2007, 12:15–12:30, H17
Nitrogen related centres in ammonia treated ZnO — •Joachim Sann1, Jan Stehr1, Albrecht Hofstätter1, Detlev M. Hofmann1, Bruno K. Meyer1, Anja Neumann2, Miriam Plana2, Martin Lerch2, Ute Haboeck3, Axel Hoffmann3, and Christian Thomsen3 — 1I. Physikalisches Institut, Justus-Liebig-Universität-Giessen, Heinrich-Buff-Ring16, — 2Institut für Chemie, Technische Universität Berlin, Straße des 17. Juni 135, — 3Institut für Festkörperphysik, Technische Universität Berlin, Hardenberg Str. 36
Ammonia (NH3) is rather frequently used for the p-type doping of ZnO due to its higher chemical reactivity compared to other gases like N2. We investigated the formation of defects in ZnO that has been subjected to heat treatments in ammonia atmosphere by photo-luminescence, electron paramagnetic resonance and Raman spectroscopy. For annealing temperatures of about 550 ∘C we found Zn interstitials and Zn interstitial - nitrogen complex centres. We relate the Zn interstitials to the I3a excitons and the complex centres to a recombination at 3.193 eV. For annealing temperatures of about 650 ∘C we find the N centres substituting oxygen. The incorporation of nitrogen is evident from Raman spectroscopy where the N related modes are observed.