Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Semiconductor Laser I
HL 4.2: Vortrag
Montag, 26. März 2007, 11:00–11:15, H13
Micro-Raman investigation of facet temperatures during catastrophic optical damage in AlGaInP laser diodes — •Marwan Bou Sanayeh1, Peter Brick1, Bernt Mayer1, Martin Müller1, Martin Reufer1, Wolfgang Schmid1, Klaus Streubel1, Sandy Schwirzke-Schaaf2, and Jens Tomm2 — 1OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg — 2Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin
Red-emitting AlGaInP lasers have found commercial applications in optical discs, barcode readers, and color printers. Moreover, high-power AlGaInP broad-area lasers are being developed for laser displays, as direct pump sources for Cr:LiSAF fs-lasers, and for the medical field, e.g. in photodynamic therapy. However, high-power applications are still limited by major degradation effects, especially catastrophic optical damage (COD). Facet temperature changes during COD of high-power red-emitting broad-area AlGaInP lasers are analysed by means of micro-Raman spectroscopy. Although no visible damage at the coated output facet can be observed, extreme temperature increase in the immediate vicinity of the COD starting point is detected. Moreover, differences between fresh and >1000h aged lasers are analyzed.