Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Semiconductor Laser I
HL 4.6: Vortrag
Montag, 26. März 2007, 12:00–12:15, H13
Low threshold 1260nm (GaIn)(NAs) semiconductor disk laser — •Wolfgang Diehl1,2, Bernadette Kunert2, Stefan Reinhard2, Peter Brick1, and Wolfgang Stolz2 — 1OSRAM Opto Semiconductors, Leibnizstr. 4, D-93055 Regensburg, Germany — 2Philipps-University Marburg, Hans Meerwein Str., D-35032 Marburg, Germany
We demonstrate low threshold lasing in semiconductor disk lasers emitting at 1260nm. Threshold densities as low as 1,1kW/cm^2 and slope efficiencies of 12,9% were achieved at 20°C while barrier pumping in pulsed operation. No intracavity heatsink was used so in cw-operation the bottomemitter reached 75°C while emitting more than 120mW. Thermal resistance of our chips was determined to be 50K/W. Nevertheless threshold densities in cw-operation were around 1,3kW/cm^2 with slope efficiencies of 11,4%. The performance of barrier pumping compared to direct well pumping showed only little difference in pulsed mode, reaching 1,4kW/cm^2 with slope efficiencies of 10,7%.