Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 45: ZnO II
HL 45.7: Vortrag
Donnerstag, 29. März 2007, 15:30–15:45, H17
Acceptor doping of ZnO nanowires — •Bingqiang Cao, Michael Lorenz, Andreas Rahm, Christian Czekalla, Holger von Wenckstern, Gabriele Benndorf, Jörg Lenzner, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
We have grown phosphorous, lithium, and nitrogen doped ZnO nanowires both by carbothermal evaporation [1] and by high-pressure pulsed laser deposition [2] by mixing various amounts of P2O5, Zn3(PO4)2, Zn3P2, Li2O, Li3N, and Li2CO3 into the ZnO source material. The diameter and length of the acceptor-doped and undoped ZnO wires was in the range from 100 nm to 3 µm and several micrometers, respectively. Cathodoluminescence spectra taken at 10 K on the acceptor doped wires show clearly resolved acceptor-related and donor-acceptor pair peaks, indicating the acceptor incorporation into the ZnO lattice. From these acceptor peak energies, thermal activation energies of the acceptor levels were determined. For comparison, temperature-dependent I-V measurements allow the determination of a (two-terminal) activation energy. Both the optical and electrical measurements will be discussed with dependence on the dopant element, its concentration, the wire geometry, and the growth route. The aim of the work is p-type conducting ZnO nanomaterial for nano p-n-junctions and light emitting devices.
This work is funded by the EU within STREP NANDOS.
[1] M. Lorenz et. al. Ann. Phys. (Leipzig) 13 (2004) 39.
[2] M. Lorenz et. al. Appl. Phys. Lett. 86 (2005) 143113.