Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.14: Poster
Donnerstag, 29. März 2007, 15:00–17:30, Poster A
Gd- and Eu-implanted GaN — •fang-yuh lo1, andreas ney2, alexander melnikov1, dirk reuter1, andreas d. wieck1, stefan potthast3, klaus lischka3, sebastién pezzagna4, and jean-yves duboz4 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, D-44780 Bochum — 2Experimentalphysik, Universität Duisburg-Essen, Lotharstr. 1, D-47057 Duisburg — 3Optoelektronischer Halbleiter, Universität Paderborn, Warburger Straße 100, D-33098 Paderborn — 4Centre de Recherche sur l'Hétéro-Epitaxie et ses Application, CNRS, Sophia Antipolis, F-06560 Valbonne
GaN is a wide band gap semiconductor, which has vast applications in optoelectronics. Recently, GaN-based diluted magnetic semiconductors have attracted great interest because theoretical work predicted Curie temperatures above 300K. Experimentally, the realization has been different. Very recently, it has been reported that Gd-doped wurzite GaN is ferromagnetic at room temperature. This is independent if the Gd is incorporated during molecular beam epitaxy or implanted afterwards. We will present studies on Gd-implanted wurzite and cubic GaN as well as GaN-based heterostructures. We find that the magnetic properties are better for wurzite GaN. In addition, we have also implanted Eu into wurzite GaN and studied the magnetic properties.