Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.27: Poster
Donnerstag, 29. März 2007, 15:00–17:30, Poster A
VLS Growth of III-V compounds — •A. Vogel1, V. Gottschalch1, J. Bauer1, G. Wagner2, M. Shirnow1, H. Paetzelt1, J. Lenzner3, and W. Schmitz2 — 1Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig — 2Institut für Mineralogie, Kristallographie und Materialwissenschaften, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig — 3Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig
The vapour-liquid-solid (VLS) growth method is well-established in fabrication of freestanding III-V-nanowires using metal-organic vapour-phase epitaxy. Some aspects of VLS growth are not yet well understood. The crystalline structure as well as the chemical composition of the catalyst may have great influence on the structure of the grown one-dimensional nanostructures. For this reason we deposited thin gold films varying from 6 to 26 nanometres on GaAs (-1-1-1), c-plane and r-plane sapphire and Si (111). Those films were analyzed using a texture goniometer, atomic force microscopy, transmission electron microscopy, conventional and temperature-sensitive X-ray diffraction offering the opportunity to capture in-situ scans up to 900∘C. We discuss the observed possible interactions between substrate, gold and precursor material. The stages of nanowire growth are discussed in detail.