Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 46: Poster 2

HL 46.28: Poster

Donnerstag, 29. März 2007, 15:00–17:30, Poster A

BP and B_xGa_1−x−yIn_yP layer structures grown by MOVPE — •K. Schollbach¹, V. Gottschalch¹, G. Leibiger², H. Paetzelt¹, G. Wagner³, J. Bauer¹, and D. Hirsch⁴ — ¹Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig — ²Freiberger Compound Materials GmbH, D-09599 Freiberg — ³Institut für Mineralogie, Kristallographie und Materialwissenschaften, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig — ⁴Leibniz-Institut für Oberflächenmodifizierung e.V., D-04318 Leipzig

BP, ternary B_xGa_1−xP and related quaternary alloys like B_xGa_1−x−yIn_yP are novel indirect transition type materials for light emitters or detectors in the visible spectral range but systematic investigations are rare or missing completely.
We have studied the metal-organic vapor-phase epitaxial growth of BP, B_xGa_1−xP and B_xGa_1−x−yIn_yP thin films on GaP, GaAs and Si substrates using the standard precursor Triethylboron, Trimethylgallium, Trimethylindium and Phosphine. The mole fraction of Boron in the epitaxial alloy-layers was varied from x = 0 to 0.04. The properties of the deposited thin film were determined using double-crystal X-ray diffraction, spectroscopic ellipsometry, chemical-etching techniques, transmission electron microscopy, photoluminescence, Raman scattering, and Secondary Ion Mass Spectroscopy. The influence of the growth conditions on structural quality, boron incorporation, interface quality, and optical properties is discussed.