Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.54: Poster
Donnerstag, 29. März 2007, 15:00–17:30, Poster A
In-situ RHEED Characterization of ZnO and MgxZn1−xO thin films — •Christian Wille, Alexander Hirsch, Robert Pilz, Frank Ludwig, and Meinhard Schilling — Institut für Elektrische Messtechnik und Grundlagen der Elektrotechnik, TU Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
Due to its wide and direct band gap ZnO is interesting to be used as semiconductor in oxide superlattices. A possibility to overcome the lattice mismatch between perovskite oxides and hexagonal ZnO is to use cubic MgxZn1−xO instead of hexagonal one.
Using Pulsed Laser Deposition (PLD) ZnO and MgxZn1−xO thin films were grown on Al2O3(0001) and SrTiO3(100) substrates respectively. The epitaxial growth of the films is investigated by in-situ reflection high energy electron diffraction (RHEED) supplemented by x-ray diffraction (XRD) and atomic force microscopy (AFM).
Standard ceramics synthesis is used to prepare the targets. To obtain atomically flat sapphire surfaces an annealing treatment is applied. The surface of the SrTiO3 substrates is atomically flat and TiO2 terminated after chemical and subsequent annealing treatment. The dependence of the PLD parameters on the growth conditions is analyzed. To obtain maximum information the experiments are planned by means of statistical design of experiments (DOE).