Regensburg 2007 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 46: Poster 2
HL 46.56: Poster
Donnerstag, 29. März 2007, 15:00–17:30, Poster A
MOVPE growth study of ZnO wires and layers — •K. Mergenthaler1, V. Gottschalch1, H. Paetzelt1, G. Wagner2, J. Bauer1, and G. Benndorf3 — 1Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig — 2Institut für Mineralogie, Kristallographie und Materialwissenschaften, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig — 3Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 3, D-04103 Leipzig
It is necessary for many applications to obtain high-quality single crystal ZnO layers. But the tendency to form nanostructures might be useful for future nanosized devices. In this study we used an atmospheric pressure MOVPE system with two independent gas inlets to avoid parasitic reactions. We varied the temperature from 500 to 800 ∘C and the VI/II ratio from 1200 to 72000 to find the ideal growth parameters for layers and needle-like growth. Precursors were DEZn and N2O with N2 as the carrier gas. We used different substrates (e.g. c-, r-plane sapphire) and analysed both anisotropic growth of ZnO micro- and nano-needles and VLS growth with gold as catalyst. The crystalline quality and the optical properties were analysed by SEM, cathodoluminescence, photoluminescence and x-ray diffraction measurements. The influence of the growth conditions on structural quality, morphology and optical properties is discussed.