Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 51: GaN: preparation and characterization
HL 51.9: Talk
Friday, March 30, 2007, 13:00–13:15, H13
MOVPE growth and characterization of Cr-doped GaN — •Yong Suk Cho1, Nicoleta Kaluza1, Hilde Hardtdegen1, Thomas Schaepers1, Vitaliy Guzenko1, Klaus Schmalbuch2, Bernd Beschoten2, Uwe Breuer3, Astrid Besmehn3, Hans-Peter Bochem1, and Hans Lueth1 — 1Institute of Bio- and Nanosystems (IBN-1), Center of Nanoelectronic Systems for Information Technology (CNI), Virtual Institute of Spin Electronics (VISel), Research Center Juelich, 52425 Juelich, Germany — 2II. Physikalisches Institute and Virtual Institute of Spin Electronics (VISel), RWTH Aachen, 52056 Aachen, Germany — 3Central Division of Analytical Chemistry (ZCH), Research Center Juelich, 52425 Juelich, Germany
We grew Cr-doped GaN by metal organic vapor phase epitaxy on undoped GaN epilayers. Conventional Ga and N precursors were used and bis(cylcopentadienyl)chromium (Cp2Cr) was employd as the Cr precursor. We investigated the effects of growth temperature, carrier gas and Cr/Ga source ratio on the Cr incorporation efficiency and on the morphological and magnetic properties of the layers. The concentration of Cr is linearly dependent on source partial pressure. The growth temperature mainly determines morphology and Cr incorporation efficiency in the layer. A certain amount of H2 in carrier gas helps to make a coalesced surface. Our Cr-doped GaN grown by MOVPE shows remanent magnetization even above room tempeature.