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HL: Fachverband Halbleiterphysik

HL 52: Transport properties

HL 52.10: Talk

Friday, March 30, 2007, 13:15–13:30, H14

Quantum capacitance controlled switching field in in-plane gated Y-branch switches — •Stefan Lang, Lukas Worschech, and Alfred Forchel — Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

We have studied the threshold characteristics and gate efficiencies of in-plane gated electron Y-branch switches controlled by different in-plane gates. Pronounced non-linearities in the threshold voltages indicate that the pinch-off region can be tuned by the side-gates from the stem into the branches. In order to explain the threshold shifts we propose a model based on coupled quantum capacitances and geometrical capacitances including charge trapping. In addition, the model also provides gate-voltage induced changes of the gate efficiency in very good agreement with the experimental findings.