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HL: Fachverband Halbleiterphysik

HL 6: Quantum dots and wires: preparation and characterization I

HL 6.1: Talk

Monday, March 26, 2007, 11:00–11:15, H15

Morphology and properties of silicon nanowires grown by thermal evaporation — •Wilma Dewald¹, Daniel Stichtenoth¹, Sven Müller¹, Tore Niermann², Sebastian Geburt¹, and Carsten Ronning¹ — ¹II. Institute of Physics, University of Göttingen, Germany — ²IV. Institute of Physics, University of Göttingen, Germany

Silicon nanowires of different morphology were grown by thermal evaporation. SiO was placed into the centre of a horizontal tube furnace, which was heated up to 1200°C. The vapour was transported to colder regions by a regulated Argon/Hydrogen gas flow, where it could condense onto Si substrates coated with a thin Au layer. Here, Au acts as a catalyst in the so called vapour-liquid-solid (VLS) growth process. In general, the obtained nanowires show a Si-SiO core-shell structure. Different morphologies occurred due to changed parameters including pressure, temperature, gas flow etc. The correlation between these parameters and the observed morphologies (SEM/TEM) has been studied. Long and straight nanowires grown under optimised parameters were dispersed on a second substrate and contacted by a FIB-system or e-beam lithography. First results on the electrical properties will be presented.