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HL: Fachverband Halbleiterphysik
HL 6: Quantum dots and wires: preparation and characterization I
HL 6.5: Talk
Monday, March 26, 2007, 12:00–12:15, H15
Horizontal arrangement of alumina nanopores on a silicon chip — •Ying Xiang1, Woo Lee2, Kornelius Nielsch2, Gerhard Abstreiter1, and Anna Fontcuberta i Morral1 — 1Walter Schottky Institut, TU München, Am Coulombwall 3, 85748 Garching, Germany — 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
Template growth of nanowires has been extensively studied over the past few years, since it provides compactness and uniformity which are necessary for reproducible device fabrication based on arrays of individual nanoobjects. Especially porous anodic alumina (PAA) film has attracted much interest due to the high aspect ratio, high level of ordering, high pore density, and uniformity. PAA templates are commonly obtained with the pores oriented perpendicular to the substrate plane[MAS,LEE]. Unfortunately this method is not compatible with mainstream Si planar processing technology. Here, we present horizontally aligned, well-defined nanopores fabricated by two-step anodic oxidation of aluminum. To characterize different pore diameters obtained by different electrolytes and different anodization voltages, SEM measurements were performed. We obtained pore diameters between 15 nm and 110 nm, and interpore distances between 45 nm and 250 nm. The pore diameter is linearly dependent on the anodization voltage, but slightly different from that of typical vertical anodization. As a result of horizontal alignment, our approach is promising for nanoelectronic applications. Reference: [LEE] W. Lee et al., Nature Materials 5, 741-747 [MAS] H. Masuda et al., Science 268, 1466 (1995)