Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 7: III-V semiconductors I

HL 7.7: Vortrag

Montag, 26. März 2007, 12:30–12:45, H17

Thermal stability and structural properties of AlInN grown on Si(111) by metalorganic vapor phase epitaxy — •Aniko Gadanecz, Jürgen Bläsing, Armin Dadgar, Christoph Hums, Thomas Hempel, and Alois Krost — Otto-von-Guericke Universität Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg

AlInN layers with In concentrations between 9..22 % and maximal thickness of 100 nm were grown by MOVPE on GaN/Si(111). Depending on the In concentration the layers are fully pseudomorphic or exhibit relaxed/pseudomorphic parts.

The thermal stability of such layers was investigated between 30 and 960 °C. It is significantly affected by the degree of relaxation: after different thermal treatment, the relaxed areas show decreasing quality, a loss of Indium and a pronounced phase separation. Additionally, with increasing lattice mismatch, a higher extension of relaxed regions under thermal treatment is observable.

Morphological characteristics, as the values of twist and lattice constants, In-sublimation and the degree of relaxation in the alloy were determined by high resolution X-ray diffraction and field emission scanning electron microscopy (FESEM).