Regensburg 2007 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)
MA 15.109: Poster
Dienstag, 27. März 2007, 15:00–19:00, Poster A
Magnetic tunnel transistor with epitaxial FeCo/Au/FeCo base — •Alexander Spitzer, Julien Vigroux, and Günther Bayreuther — Universität Regensburg, Institut für Experimentelle und Angewandte Physik, Regensburg
The magnetic tunnel transistor (MTT) is a promising candidate for a highly sensitive magnetic sensor. In the present MTT structure hot electrons are injected into a spin valve base from a metallic emitter across a tunnel barrier. They cause a ballistic current, IC, across the Schottky barrier with the GaAs substrate as the collector. By epitaxial growth of the spin valve the transfer ratio of collector current IC to emitter current IE is expected to increase because of less structural defects [1]. We present MTTs with a fully epitaxial Fe34Co66/Au/Fe34Co66 spin valve base grown on a n-GaAs(001) substrate, capped with an Al2O3 tunnel barrier and a Ta emitter. The samples are characterized by STM, XPS, TEM and temperature dependent MOKE. For electron energies above 0.8 eV a clear magnetic field-dependent ballistic current is measured in the collector. The temperature dependence of the magneto-current ratio (MCR), i.e. normalized difference of IC between parallel and antiparallel alignment of both FeCo layers, is discussed.
[1] T. Hagler, C. Bilzer, M. Dumm, W. Kipferl, G. Bayreuther, J. Appl. Phys. 97, 10D505 (2005)