Regensburg 2007 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 15: Poster:ThinFilms(1-33),Transp.(34-49),ExchBias(50-56),
Spindynamics(57-70),Micro-nanostr.Mat.(71-82),
Particles/Clust.(83-88), Mag.Imag./Surface(89-96),
Spinelectronics(97-109), Theory/Micromag.(110-116),
Spinstruct/Phasetr.(117-128),Magn.Mat.(129-139),
Aniso.+Measuring(140-145), MolMag.(146-152),
MSMA(153-156)

MA 15.59: Poster

Dienstag, 27. März 2007, 15:00–19:00, Poster A

Stray Fields and Anisotropic Magnetoresistance of Domain Walls in Permalloy Nanowires — •Peter Lendecke, Hannah Ziehlke, René Eiselt, Ulrich Merkt, and Guido Meier — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Germany

Magnetic domain walls in nanowires have attracted a lot of interest because of their application in logic [1] and memory devices [2]. We present Hall micromagnetometry and anisotropic magnetoresistance (AMR) measurements of domain walls in wires of 100 – 500 nm width and 30 nm thickness. In our experiments domain walls are induced into the wires at well defined positions either at a lithographically defined notch or in the curved region of a wire. In both geometries a suitable sequence of applied magnetic fields serves to generate the domain walls. AMR measurements are performed in order to verify the presence and movement of the wall in an external magnetic field. The AMR contribution of the wall is small, of the order of 0.1 %. For the realization of the proposed “racetrack” memory, a quantitative determination of stray-field strenghts for different domain-wall types is crucial. The high sensitivity and non-invasive nature of Hall micromagnetometry allow for the determination of the stray field as well as the nucleation and the depinning field of the walls [3].

[1] D. A. Allwood et al., Science 309, 1688 (2005)

[2] S. S. P. Parkin, U. S. Patent No. US 6834005 (2004)

[3] G. Meier et al., J. Appl. Phys. 92, 7296 (2002)