Regensburg 2007 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 20: Poster session
MM 20.43: Poster
Dienstag, 27. März 2007, 14:45–18:00, Poster C
Post annealing effect on electrical transport properties and defect annealing of La 0.67 Ca 0.33 MnO 3 films grown on vicinal substrate — •Lan Yu1,2, Hanns-Urich Habermeier1, Pengxiang Zhang1,2, and Jialin Shun2 — 1Max-Planck Institute for Solid State Research. Heisenberg str.1, 70569, Stuttgart,Germany — 2Kunming University of Science and Technology,
La 0.67 Ca 0.33 MnO 3 thin films have been grown on 10°,15 *,20* vicinal cut LaAlO3 (100) substrates by PLD using identical growth conditions. The films have been subjected after characterization to a high temperature * high oxygen pressure annealing step. The films are characterized by transport measurements as well as dedicated X-ray analysis. As compared to as-grown films they showed drastic changes of the resistance- temperature curve , with enhancements of Tc from 257K to 291K and an obvious decreases of resistance. This effects are especially pronounced in films grown on 20 * miscut LAO. The as grown films show a systematic change of the resistivity and the peak temperature associated to the Curie temperature before annealing. The results are discussed with respect to the defect formation and other subsequent annealing arising from both, oxygen related as well as substrate-induced defects. Especially the role of the miscut angle and its relation to the defect formation will be highlighted and the role of oxygen reordering and strain relaxation upon annealing is discussed.