Regensburg 2007 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)
O 17.25: Poster
Montag, 26. März 2007, 17:30–20:30, Poster C
Ion-induced surface ripples in silicon — •Andreas Biermanns1, Joerg Grenzer2, Stefan Facsko2, Souren Grigorian1, and Ullrich Pietsch1 — 1Institute of Physics, University of Siegen,Walter Flex 3, 57078 Siegen, Germany — 2Institute of Ion Beam Physics and Materials Research,Bautzner Landstrasse 128,D-01328 Dresden, Germany
The morphological evolution of surfaces during ion-beam irradiation has attracted a significant interest due to possibility of the development and the controlling of selforganization in nanostructures. Pattering and texture on nanometer length scale at metal and semiconductor surfaces has become a topic of intense research. In particular the surface and subsurface ripple formation under 40Ar+ ion-beam irradiation of Si (100) crystal has been studied recently. Strong ripple formation has been found for an irradiation energy of 60keV and incident angles around 60°. During implantation a corrugated surface layer is formed, consisting of a strongly damaged, amorphous near-surface layer followed by a nearly sinusoidal shaped interface towards the crystalline material. In the present work, we investigate the onset and evolution of ripple-formation as function of implantation energy and incidence angle of the ion beam.