Regensburg 2007 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Poster Session I (Nanostructures at Surfaces; Metal Substrates: Epitaxy and Growth; Methods: Scanning Probe Techniques; Phase Transitions)
O 17.79: Poster
Montag, 26. März 2007, 17:30–20:30, Poster C
GIXRD and XRR Studies on Thin Bi(111) Films on Si(001) — •Carsten Deiter1, Giriraj Jnawali2, Boris Krenzer2, Michael Horn-von Hoegen2, Thomas Weisemoeller1, Lars Boewer1, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49076 Osnabrück, Germany — 2Fachbereich Physik, Universität Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany
Investigating the phenomena of quantum transport and finite-size effects, bismuth has been extensively studied due to its large Fermi wavelength and long carrier mean free path. Its material properties are advantageous for the realization of spin based electronic devices, and result also in large magnetoresistance effects. Here we report on bismuth films with a thickness of 6nm investigated by grazing incident x-ray diffraction (GIXRD) and x-ray reflectivity (XRR) measurements.
MBE fabricated samples were examined by AFM and spot profile analysis low energy electron diffraction (SPA-LEED) directly after the growth process. Thereafter the x-ray experiments were performed at the beamlines BW2 and W1 at HASYLAB. Sample A was fabricated at 150K with additional annealing at 450K for 30min (solid phase epitaxy, SPE). Contrary to this two step method the substrate of sample B was kept at a temperature of 300K during the coating and no additional annealing step was performed.
The experimental results show that the deposition method of SPE with its two step process leads to flat films with less roughness than the conventional technique.