Regensburg 2007 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
SYOE: Symposium Organic Thin Film Electronics: From Molecular Contacts to Devices
SYOE 5: Organic Devices
SYOE 5.3: Talk
Tuesday, March 27, 2007, 12:15–12:30, H1
Electrical characteristics of Ferroelectric Field Effect Transistors (FeFETs) incorporating Langmuir-Blodgett films — •Hermann Kohlstedt1, Anderas Gerber4, Rainer Waser1, Timothy Reece2, Stephen Ducharme2, Eduard Rije3, Martin Roeckerrath3, and Jürgen Schubert3 — 1Institute of Solid State Research (IFF), and CNI * Center of Nanoelectronic Systems for Information Technology, 52425 Jülich, Research Center Jülich, Germany — 2Nebraska Center for Materials and Nanoscience, — 3Institute for Bio and Nanosystems (IBN1), and CNI * Center of Nanoelectronic Systems for Information Technology, 52425 Jülich, Research Center Jülich, Germany — 4Smart Materials, Caesar Research Center, 53175 Bonn, Germany
We report the electrical characteristics of a kind of non-volatile memory device consisting of a field-effect transistor where the gate insulator includes a thin ferroelectric polymer film, producing a Ferroelectric-FET, or FeFET. Each device consisted of a p-type silicon substrate, with diffusion-doped source and drain contacts, SiO2, HfO2, CeO2 or DyScO3 as dielectric buffer layer, a ferroelectric Langmuir-Blodgett film of a 70% vinylidene fluoride-30% trifluoroethylene copolymer, and a gold gate electrode. Details of the fabrication procedure will be presented. The source-drain conductance showed hysteresis due to polarization reversal in the ferroelectric film as the gate bias voltage was cycled. State retention was approximately several minutes. The Fe-FET is a promising low-voltage and nonvolatile memory element that affords fast non-destructive readout.