Regensburg 2007 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
SYSE: Symposium Strain-Engineering for New Functional Structures
SYSE 1: Strain engineering in semiconductors
SYSE 1.3: Vortrag
Montag, 26. März 2007, 15:15–15:30, H1
Stress in nanostructured semiconductors — •Silke Christiansen1,2, Michael Becker2, Andreas Berger2, Cameliu Himcinschi1, Vladimir Sivakov1,3, Gudrun Andrae3, Fritz Falk3, Rajendra Singh1, and Jens Schneider4 — 1Max-Planck Institute, Halle, Germany — 2Martin Luther Universität Halle-Wittenberg, Halle, germany — 3IPHT, Jena, Germany — 4CSG Solar, Thalheim, Germany
Mechanical stress in semiconductor devices can either improve or degrade the device properties. Mechanical stress can be used to tailor the band structure of semiconductors. A higher mobility of charge carriers and higher device frequencies can be achieved. On the other hand, large mechanical stresses induce unwanted dislocations and dislocation motion. Mechanical stress fields can initiate crack formation that leads to breakage of whole wafers or devices. To detect the influence and the sources of mechanical stresses, the appropriate detection methods are needed. μ-Raman spectroscopy is a method that has gained recently increasing attention in solid-state physics to investigate mechanical stresses in semiconductor materials, structures and devices. In our talk we will show how Raman spectroscopy can be use to measure mechanical stress in nano-scale semiconductor layer stacks and stuctures and in polycrystalline silicon solar cell materials. μ-Raman spectroscopy is combined with real structure analysis by electron microscopy (EM) techniques such as high resolution transmission EM, analytical EM, and elecron-back scatter diffraction (EBSD) in a scanning EM.