Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DF: Fachverband Dielektrische Festkörper
DF 13: Dielectric and ferroelectric thin films and nanostructures III
DF 13.4: Vortrag
Donnerstag, 28. Februar 2008, 15:00–15:20, EB 107
Atomic vapour deposition of Sr-Ta-O films for MIM applications — •Mindaugas Lukosius1, Christian Wenger1, Sergej Pasko2, Ioan Costina1, Jaroslaw Dabrowski1, Roland Sorge1, Hans-Joachim Müssig1, and Christoph Lohe2 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
Metal-Insulator-Metal (MIM) capacitors are widely used in ICs for Radio-Frequency (RF) applications. Advanced RF-technologies require further reduction in feature size combined with several significant materials challenges: according to the International Roadmap for Semiconductors for wireless communication technologies, the capacitance density should be higher than 5 fF/*m2, capacitance variation and leakage current should be minimized and quality factor should be maximized [1]. These requirements imply the replacement of silicon oxide-based dielectrics with new high-k materials. Sr-Ta-O thin films are of interest for applications as high-k dielectric in MIM capacitors in CMOS back-end of line (BEOL) due to their high permittivity.
Depositions of strontium tantalate films were performed by Atomic Vapor Deposition (AVD) technique. We observed that the process pressure has a considerable influence on the stoichiometry of the deposited Sr-Ta-O films as well as on some electrical properties.
[1] RF and Analog/Mixed-Signal Technologies for Wireless Communications, ITRS (Semiconductor Industry Association, Palo Alto 2006 update ).