Berlin 2008 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Dielectric and ferroelectric thin films and nanostructures III
DF 13.9: Vortrag
Donnerstag, 28. Februar 2008, 16:40–17:00, EB 107
Molecular Beam Epitaxy of crystalline oxides on Si for C-MOS and for the monolithic integration of semiconductors on Silicon — •Guillaume Saint-Girons1, Clément Merckling1, Mario El-Kazzi1, Loic Becerra1, Philippe Regreny1, Gilles Patriarche2, ludovic Largeau2, Vincent Favre-Nicolin1, and Guy Hollinger3 — 1INL/UMR5270, site ECL, 36 av. Guy de Collongue, 69134 Ecully cedex, France — 2LPN-UPR20/CNRS, Route de Nozay, 91460 Marcoussis, France — 3CEA/DRFMC/SP2M, 17 rue des Martyrs 38054 Grenoble and UJF, BP53, 38041 Grenoble cedex 9, France
In this contribution, a detailed description of the growth mechanisms and structural properties of high-k Al2O3, Gd2O3 and amorphous LaAlO3 on Si will be presented. On the basis of these studies, relevant oxide/Si systems will be proposed that fulfill the requirements of future C-MOS systems. In particular, very promising electrical characteristics have been obtained showing that the (amorphous LaAlO3)/Si system is compatible with ITRS recommendations in terms of EOT and leakage current. Moreover, it will also be shown that InP/oxide heterointerfaces present a quasi-ideal compliant behavior that opens the way to the monolithic integration of III-V heterostructures on Si for advanced micro and optoelectronic applications.