Berlin 2008 – scientific programme
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DS: Fachverband Dünne Schichten
DS 25: Trends in Ion Beam Technology: From the Fundamentals to the Application
DS 25.5: Talk
Thursday, February 28, 2008, 12:15–12:30, H 2013
Chemical epitaxy of quartz after alkali-ion implantation: luminescence and surface structure — Stanislawa Gasiorek1, Juhani Keinonen1,2, •Klaus-Peter Lieb1, Pratap Sahoo1, and Timo Savajaara2 — 1II. Physikalisches Institut, Universität Göttingen, D-37077 Göttingen — 2Accelerator Laboratory, FI-00014 University of Helsinki
Doping of alpha-quartz by ion implantation leads to amorphization even at low fluences, but subsequent annealing in air or oxygen can restore the crystalline order (chemical epitaxy [1,2]). Here we report on measurements of Rutherford backscattering channeling (RBS-C) and cathodoluminescence (CL) spectra during chemical epitaxy of quartz irradiated with Na and Rb ions and annealed in 18O-gas. In particular, the variation of the damage profile and CL spectra (the latter taken at 10 K and 300 K) as functions of the Na-ion fluence will be discussed. The CL spectra at 10 K are dominated by a 2.90-eV band and differ greatly from the ones taken at 300 K. Conclusions concerning the underlying photoactive defect structures will be drawn. A spider-net type surface structure developing after Rb-ion irradiation was measured by means of atomic force microscopy.
[1] K. P. Lieb, in Encyclopedia of Nanoscience and Nanotechnology,
vol. 3, H. S. Nalwa, Ed., Am. Scient. Publ. (2004) pp. 233-251.
[2] K. P. Lieb and J. Keinonen, Cont. Phys. 47 (2006) 305.