Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application

DS 28.2: Vortrag

Donnerstag, 28. Februar 2008, 16:30–16:45, H 2013

Ion beam synthesis of Mn/Sb clusters in silicon — •Michael Steinert¹, Andreas Undisz², Markus Rettenmayr², and Werner Wesch¹ — ¹Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena — ²Institut für Materialwissenschaft und Werkstofftechnologie, Friedrich-Schiller-Universität Jena

Sequential ion implantation was used to incorporate Mn and Sb ions at high fluences of 1×10¹⁶ at/cm² and 2×10¹⁶ at/cm², respectively, into weak p-type Si (0 0 1). The implantation was performed at temperatures of 200 ^∘C and 350 ^∘C with energies of 180 keV (Mn) and 350 keV (Sb). Channeling-RBS measurements carried out before and after a subsequent thermal treatment via rapid thermal annealing (RTA) at temperatures from 950 ^∘C to 1350 ^∘C for 30 s indicate a strong temperature dependent redistribution of the implanted species during the annealing process governed by the radiation caused defects. An increase of the c-RBS backscattering yield of Sb in all annealed samples suggests the formation of Sb-based clusters. Additionally performed cross-sectional TEM analyses, including EDX measurements, clearly show the presence of hexagonal shaped elementary Sb precipitates as well as compound-clusters consisting of Mn and Sb, which are aligned to the crystal structure of the host silicon. High resolution TEM indicates different crystalline phases inside the observed particles, for the most part deviating in orientation and atomic plane distance from the Si-matrix.