Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 3: Magnetic Semiconductors
MA 3.11: Vortrag
Montag, 25. Februar 2008, 12:45–13:00, H 1012
Domain Wall Dynamics in GaMnAs — •Liza Herrera Diez1, Matthias Rössle1, Erhan Arac1, Violetta Sessi1, Fabrizio Arciprete2, Ernesto Placidi2, Axel Enders1, Jan Honolka1, and Klaus Kern1 — 1Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany — 2Dipartimento di Fisica, Università di Roma 'Tor Vergata' , Rome, Italy
GaMnAs is among the most prominent representatives of ferromagnetic semiconductor materials for spintronics. The linkage between carrier density and magnetic properties like Tc [1] and magnetic anisotropy enables the tuning of magneto-transport properties [2], which makes this material a potential candidate for the development of magneto-logic devices. However, the latter requires full control over magnetic reversal dynamics, which in most cases happens via the nucleation and propagation of domain walls.
Based on the energy landscape given by the interplay of biaxial and uniaxial anisotropy contributions in this material, we are able to directly observe and identify magnetization reversal processes mediated by 90° and 180° domain walls using Kerr microscopy as well as magneto-transport measurements.
Results obtained from the analysis of the nucleation and propagation processes give valuable information for controlling domain wall dynamics and for the development of single domain devices.
[1]T. Dietl, et al., Science 287, 1019 (2000).
[2]D. Chiba, M. Yamanouchi, F. Matsukura, H. Ohno, Science 301, 943 (2003).