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Berlin 2008 – scientific programme

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MA: Fachverband Magnetismus

MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)

MA 32.13: Poster

Friday, February 29, 2008, 11:15–14:00, Poster E

Ion bombardment induced magnetic patterning of reference electrodes in magnetic tunnel junctions with MgO barrierVolker Höink1, Xinli Kou1, •Jan Schmalhorst1, Günter Reiss1, Tanja Weis2, Daniel Lengemann2, and Arno Ehresmann21Thin Films and Physics of Nanostructures, Department of Physics, University of Bielefeld, P.O. Box 100131, 33501 Bielefeld, Germany — 2Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Kassel University, Heinrich-Plett-Str.40, 34132 Kassel, Germany

For some applications as, e.g., a special type of reconfigurable magnetic logic [1] it is necessary to manipulate the direction of the exchange bias coupling of the reference layer in a magnetic tunnel junction (MTJ). It has been shown in the past that a magnetic patterning of reference layers is possible without a significant loss of tunnel magnetoresistance (TMR) in MTJs with alumina barrier [2,3]. Recently, high TMR amplitudes of up to 500% have been reported for CoFeB / MgO / CoFeB based MTJs [4]. Here, the influence of the ion bombardment on the TMR amplitude, the resistance, and inelastic electron tunnelling spectra of two types of CoFeB / MgO / CoFeB based MTJs is investigated.

[1] Appl. Phys. Lett. 91 (2007) 162505

[2] J. Appl. Phys. 94 (2003) 5556

[3] Appl. Phys. Lett. 86 (2005) 152102

[4] Appl. Phys. Lett. 90 (2007) 212507

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