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MM: Fachverband Metall- und Materialphysik

MM 4: Nanostructured Materials I

MM 4.4: Talk

Monday, February 25, 2008, 11:00–11:15, H 0107

Electronic transport properties of individual chemically reduced graphene oxide sheets — •cristina gómez-navarro¹, thomas weitz¹, alexander bittner¹, mateo scolari², alf mews², marko burghard¹, and klaus kern¹ — ¹Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany — ²Department of Chemistry, University of Siegen, D-57068 Siegen, Germany

The peculiar electronic properties of graphene sheets have attracted substantial interest in the scientific community during the past few years (1-2). Micromechanical cleavage is currently the most effective method to produce high-quality graphene sheets. However this method does not enable the large-scale production required for most applications. Consequently alternative production methods for graphene sheets are highly desirable. Here we report on the electronic transport properties of single graphene sheets obtained via chemical reduction of graphite oxide. We find that reduced single layers exhibit room temperature conductivities of 0,05-2 S/cm and field effect mobilities of 2-200cm2/Vs. Temperature dependent electrical measurements and Raman spectroscopic investigations reveal that charge transport occurs via variable range hopping between intact graphene islands with sizes of the order of several nanometers. The electrical properties of sheets composed of two and more layers will be also discussed (3).

1. K. S. Novoselov et al., Science 306, 666 (2004).

2. C. Berger et al., Science 312, 1191 (2006).

3. C.Gómez-Navarro et al. Nanoletters (2007)