Berlin 2008 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Fachverband Oberflächenphysik
O 10: Semiconductor Substrates: Epitaxy and Growth
O 10.7: Talk
Monday, February 25, 2008, 14:45–15:00, MA 042
Investigation of a long-ranged ordered silicate adlayer on the 6H-SiC(0001) surface by LEED, AES and IPE — •Nabi Aghdassi, Ralf Ostendorf, and Helmut Zacharias — Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Straße 10, 48149 Münster
We have prepared well-ordered silicate adlayers on 6H-SiC(0001) surfaces by an ex situ hydrogen treatment at elevated temperatures. The generated surfaces appear to be fully passivated and therefore stable in ambient air. LEED patterns clearly feature a (√3×√3)R30∘ periodicity which can be attributed to a long range order of the created oxide layers. Furthermore AES spectra exhibit a distinct OKLL peak as well as a SiLVV peak showing a typical oxidic-like shape that is indicating the presence of Si-O bonds on the surface. The unoccupied electronic states of the SiO2/SiC interface are studied by inverse photoemission spectroscopy (IPE).