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O: Fachverband Oberflächenphysik

O 35: Symposium: Atomic Wires at Surfaces II
(Invited Speakers: Erio Tosatti, Serge Lemay, Shuji Hasegawa)

O 35.6: Invited Talk (no funding)

Tuesday, February 26, 2008, 16:00–16:30, HE 101

Transport at Atomic Wires on Silicon Surfaces — •Shuji Hasegawa — University of Tokyo, Tokyo, Japan

Owing to new techniques of microscopic four-point probes with four-tip scanning tunneling microscope (4T-STM) and monolithic four-point probes, electronic transport through single-atomic layers as well as atomic chains and nanowires on semiconductor crystals can be now measured directly. Interesting transport properties of such atomic-scale structures have been revealed; the instability and atomic-scale defects intrinsic to atomic wires play decisive roles in transport. I will introduce and summarize several topics in the talk such as metal-insulator transition, hoping conduction due to defects, inter-chain transport and so on. Recent advancements with metal-coated carbon-nanotube tips in 4T-STM are also introduced.