DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Fachverband Oberflächenphysik

O 36: Surfaces and Films: Forces, Structure and Manipulation

O 36.5: Talk

Tuesday, February 26, 2008, 15:15–15:30, MA 041

Morphology and electronic structure of epitaxially grown CuInS2 films — •Carsten Lehmann1, Volker Eyert2, and Christian Pettenkofer11Hahn-Meitner-Institut, SE6, Berlin, Germany — 2Universität Augsburg, Inst. f. Physik, Augsburg, Germany

The ternary compound semiconductor CuInS2 with a direct band gap of 1.53 finds application as absorber material in modern thin film solar cells. For a better understanding of the parameters determining the properties of a junction detailed information on the electronic structure is necessary. We report on ARUPS measurements on thin epitaxial CuInS2 films prepared on sulfur passivated GaAs(100) and GaAs(111)B. Samples were prepared in a combined UHV GSMBE deposition and analysis system with an organic sulfur precursor. The bandstructure mapping was performed at the beamline TGM7 at BESSY II. The experimentally obtained electronic structure for CuInS2(001) shows good agreement with augmented spherical wave (ASW) calculations based on density functional theory (DFT) and the local density approximation (LDA). For CuInS2(112) films deposited on GaAs(111)B substrates we observe a LEED pattern with a sixfold symmetry which is not in accordance with a simple chalcopyrite (112) structure. We will discuss the observed structure within a domain model of the surface and its implications on our obtained spectra.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2008 > Berlin