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TT: Fachverband Tiefe Temperaturen

TT 39: Transport: Nanoelectronics II - Spintronics and Magnetotransport

TT 39.1: Invited Talk

Friday, February 29, 2008, 10:15–10:45, EB 202

EuO_1−x Epitaxially Integrated with Silicon — •Andreas Schmehl^1,2, Stefan Thiel², Christoph Richter², Ross Ulbricht¹, Tassilo Heeg¹, Marco Liberati³, Martin Röckerath⁴, Sebastian Mühlbauer⁶, Peter Böni⁶, Yuri Barash⁵, Jürgen Schubert⁴, Yves Idzerda³, Jochen Mannhart², and Darrell G. Schlom¹ — ¹Pennsylvania State University, University Park, PA, USA — ²Universität Augsburg, Augsburg — ³Montana State University, Bozeman, MT, USA — ⁴Forschungszentrum Jülich, Jülich — ⁵Russian Academy of Sciences, Chernogolovka, Russia — ⁶Technische Universität München, Garching

The ferromagnetic semiconductor EuO is well known for its outstanding magneto-transport and magneto-optical properties, but for decades its instability in air has prevented the thorough exploration of this exciting material. Exploiting oxide MBE and advanced capping techniques, we are now able to epitaxially integrate EuO with a multitude of substrates including silicon and GaN and pattern it using photolithography. Using Andreev reflection spectroscopy, we demonstrate that these films have spin-polarizations exceeding 90%, rendering EuO a very promising candidate to establish spin-selective ohmic contacts to silicon. A novel patterning process, combining in situ ion etching and sputtering, allows for the patterning of the films, paving the way to exploit EuO in semiconductor-based spintronic devices as well as in devices making use of its exceptional magneto-transport and magneto-optical properties.