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Q: Fachverband Quantenoptik und Photonik
Q 16: Photonik I
Q 16.8: Vortrag
Dienstag, 11. März 2008, 15:45–16:00, 2B/C
Fabrication and Characterization of Silicon Inverse Spiral and Slanted Pore Structures — Martin Hermatschweiler1,2, •Isabelle Staude1, Michael Thiel1, Martin Wegener1,2, and Georg von Freymann2 — 1Center for Functional Nanostructures and Institut für Angewandte Physik, Universität Karlsruhe (TH), 76128 Karlsruhe — 2Institut für Nanotechnologie, Forschungszentrum Karlsruhe GmbH, 76021 Karlsruhe
We here realize a variety of silicon inverse (SI) photonic crystal (PC) structures for the first time. Direct laser writing of polymeric templates and a silicon single-inversion procedure [1] allow for the fabrication of 3D photonic band gap (PBG) structures. This leads to broad and prominent stop bands in the near infrared.
Several different types of structures that theoretically exhibit large PBGs are demonstrated: (i) SI spiral PCs consisting of circular/square spirals arranged on a bcc/tetragonal lattice, respectively. [2,3] (ii) SI slanted pore structures arranged on a tetragonal lattice. [4] To our knowledge, none of the structures (i) can be accessed by any different method. Optical reflectance and transmittance measurements suggest the existence of PBGs for all proposed geometries. The experimental formation of PBGs shall be verified by comparison of the measurements to scattering-matrix as well as band structure calculations.
[1] M. Hermatschweiler et al., Adv. Funct. Mater. 18, 2273 (2007)
[2] A. Chutinan et al., Phys. Rev. B 57, R2006 (1998)
[3] O. Toader et al., Science 292, 1133 (2001)
[4] O. Toader et al., Phys. Rev. Lett. 90, 233901-1 (2003)