Freiburg 2008 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 55: Halbleiterdetektoren II
T 55.3: Vortrag
Dienstag, 4. März 2008, 17:15–17:30, KGI-HS 1228
Development of new types of photo-sensors as an alternative to SiPMs — •Jelena Ninkovic1,2, Rouven Eckhart3,2, Robert Hartmann3,2, Peter Holl3,2, Cristian Koitsch3,2, Gerhard Lutz3,2, Razmik Mirzoyan1, Hans-Günther Moser1,2, Rainer Richter1,2, Gerhard Schaller4,3, Florian Schopper4,3, Heike Soltau3,2, Masahiro Teshima1, George Valceanu1,2, and Ladisav Andricek1,2 — 1Max-Planck-Institute for Physics, Föhringer Ring 6, D-80805 Munich, Germany — 2Max-Planck-Institute Semiconductor Laboratory, Otto-Hahn-Ring 6, D-81739 Munich, Germany — 3PNSensor GmbH, Römerstr. 28, D-80803 Munich, Germany — 4Max-Planck-Institute for Extraterrestrial Physics, Giessenbachstraße, D-85748 Garching, Germany
Development of photo-sensors for detection of low intensity photon flux is one of the critical issues for experimental physics, medical tomography and many other areas. A few years ago a new type of photodetector was introduced; the so-called Silicon photomultiplier (SiPM). Its good characteristics make SiPM suitable for many applications. Yet, for the low light level applications higher quantum efficiency is required. Two alternative approaches have been developed within semiconductor laboratory of Max Planck Society. The first promises very high (>80%) quantum efficiency in the wide wavelength range (300-1000nm). Second device increased QE and simplified production technology compared to conventional SiPMs. Extensive simulations have demonstrated the validity of both concepts. Both approaches will be presented as well as results from the first proof of principle productions.