Dresden 2009 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 6: Poster I
DF 6.6: Poster
Dienstag, 24. März 2009, 09:30–12:30, P5
Post deposition annealing induced transition from Pr2O3 to PrO2 films on Si(111) — •Thomas Weisemoeller1, Florian Bertram1, Sebastian Gevers1, Andreas Greuling1, Carsten Deiter2, Holger Tobergte1, Manfred Neumann1, Joachim Wollschläger1, Alessandro Giussani3, and Thomas Schroeder3 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany — 2HASYLAB at DESY, Notkestr. 85, D-22607 Hamburg, Germany — 3Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Films of hexagonal praseodymium sesquioxide (Pr2O3) were deposited on Si(111) by molecular beam epitaxy and thereafter annealed in oxygen at different temperatures, ranging from 100∘C to 700∘C. XRR, XRD and GIXRD measurements were performed at beamlines W1 and BW2 at HASYLAB/DESY to analyze the structure of oxide films and interfaces. The films of the samples annealed at 300∘C or more were transformed to PrO2 with B oriented Fm3m structure, while films annealed at lower temperatures keep the hexagonal structure. The films compose of coexisting PrO2 and PrO2−δ species which coexist lateral. The oxygen vacancies are partly ordered lateral and increase the vertical lattice constant of the film, whereas the horizontal lattice constant is almost identical for both species and on all samples. The latter lattice constant matches the lattice constant of the originally crystallized hexagonal praseodymium sesquioxide. That means that no long range reordering of the praseodymium atoms takes place.