Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 1: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) I

DS 1.1: Vortrag

Montag, 23. März 2009, 10:15–10:30, GER 37

Epitaxial growth of ZnO on CuInS₂(112) — Stefan Andres¹, •Carsten Lehmann², and Christian Pettenkofer² — ¹Oerlikon, Lichtenstein — ²Helmholtz-Zentrum Berlin, Germany

We report on epitaxial growth of ZnO on (112) orientated CuInS₂ thin films. The preparation of the samples was performed in an ultra high vacuum system at the Helmholtz-Zentrum Berlin. An alternating step-by-step growth and investigation by photoelectron spectroscopy (PES) and low energy electron diffraction (LEED) provided insight on the growth dynamics and structure of the ZnO-CuInS₂-interface. We find that during the initial growth no ZnO is deposited. Instead a monolayer of ZnS is formed by depleting the CuInS₂ surface of excess sulfur. Thereafter, the ZnO growth starts on this ZnS buffer layer. Band alignment considerations show that the ZnS buffer layer is thin enough to provide a beneficial band alignment situation concering photovoltaic application.