Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) I
DS 1.5: Vortrag
Montag, 23. März 2009, 11:15–11:30, GER 37
Characterization of Sr-Ta-O/TiN/Si stacks by means of XPS, AES and TOF-SIMS — •Canan Baristiran Kaynak, Mindaugas Lukosius, and Christian Wenger — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Strontium tantalate (STA) films has been deposited on TiN/Si(100) substrates by Atomic Vapor Deposition (AVD) technique using a single source Sr[Ta(OEt)5(methoxyethoxide)]2 as precursor for metal-insulator-metal (MIM) applications. The deposition of STA films was investigated in dependence on different deposition conditions. X-Ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) were used for chemical and interface characterization of STA thin layers. The AES and TOF-SIMS depth profiles revealed a uniform and homogeneous STA films. Furthermore, electrical properties have been investigated in MIM capacitors after deposition of Au as top electrode. The correlation between chemical compositions of STA based MIM capacitors and their electrical properties are presented.